论坛风格切换切换到宽版
  • 22925阅读
  • 93回复

IRF840居然可以用在7MHz的功放!? [复制链接]

上一主题 下一主题
离线bd5hsa
发帖
3183
只看该作者 20楼 发表于: 2005-09-25
图来了,手机拍的!!!!!!!!!!!
本主题包含附件,请 登录 后查看, 或者 注册 成为会员
离线BG5KJ
发帖
667
只看该作者 21楼 发表于: 2005-11-03
江老师你那线圈的参数是多少?用什么磁环?磁环你那有卖吗?
离线BD3SE
发帖
1628
只看该作者 22楼 发表于: 2005-11-04
我以前玩29。6mhz fm机的时候,曾用irf640做的放大器出50w。
离线xiaosu1972
发帖
817
只看该作者 23楼 发表于: 2005-11-04
用户被禁言,该主题自动屏蔽!
离线BD3SE
发帖
1628
只看该作者 24楼 发表于: 2005-11-04
'
irf740 如何?
'
    应该可以用
离线bd4ji
发帖
4532
只看该作者 25楼 发表于: 2005-11-04
'
耗尽型和增强性在英文中如何讲??
'
耗尽型: depleted mos
增强型: enhanced mos
离线bd4kg
发帖
225
只看该作者 26楼 发表于: 2005-11-04
哈哈!找到知音了!几年前做烧了不少640、840的,挺好玩,发热太大、还自激
离线xiaosu1972
发帖
817
只看该作者 27楼 发表于: 2005-11-05
用户被禁言,该主题自动屏蔽!
离线bg2ey
发帖
3235
只看该作者 28楼 发表于: 2005-11-05
'
我以前玩29。6mhz fm机的时候,曾用irf640做的放大器出50w。
'
irf640在10米段效率这么高?推动几瓦?
离线BA7KW
发帖
16344
只看该作者 29楼 发表于: 2005-11-05
使用if510类做的功放指标不容易做好
由于该类管子设计使用在开关类状态,所以用在线性电路时其表现并不好,主要是imd特性很差,结果就是在ssb通信中产生很多的邻频信号,干扰其他电台的通信。所以正规功放电路都用专用的线性放大管来做功放管,成品机中几乎没有使用这类的管子,虽然这些管子很便宜,但如果用在cw放大的话该管子还是很实用的。
离线范工
发帖
168
只看该作者 30楼 发表于: 2005-11-05
用户被禁言,该主题自动屏蔽!
本主题包含附件,请 登录 后查看, 或者 注册 成为会员
离线BA7KW
发帖
16344
只看该作者 31楼 发表于: 2005-11-06
测试方法
一般使用6db参考值测试方法:(针对短波电台功放的测试)
使用频谱仪测量满cw功率输出时为参考电平(如100瓦电台在通过100瓦衰减器(如50db))为0dbm.
输入双音信号到电台,ssb模式,发射,在频谱仪观测两个信号电平,调节双关旋钮(如mic gain,pwr)使两个信号的电平为-6dbm,这是他们两边的imd产物与-6dbm的幅度差就是3阶互调,一般在20-40db左右,再往两边过去的就是5阶互调,看图:
与一般的双极发射管和线形专用发射管(如mrf150)相比,irf510的特性就差得多,可参看相关连接的介绍,在20瓦输出时,最差的情况已经只有20db了,如果输出40瓦,后果不堪设想,但看一下1000mp mark v的输出,200瓦时超过30db,75w class a时3x db,
所以厂家不会使用irf510类的管子来做线性功放,虽然它们很便宜,一个mrf150管子国内i报价400元,一个irf510才几元,差别太大了。
但是作为一种研究或者qrp应用,irf510还是可行的,它在10瓦时出时还是有不错的表现的。但如果用到20瓦以上,就似乎不太合适了。
相关连接:http://www.qsl.net/ik4auy/article_4.htm
网页里面有yaesu等成品机的imd特性图链接,好好理解一下原文吧!!里面有很好的解说!!
hf qrp linear amplifier with low cost mosfets (here is a brief translation)

our main goal was to get an optimized low cost mosfets linear amplifier circuit for qrp, with around 10 - 15 watts pep or cw average power for ssb and cw, with lower higher order imd in the 1.8 to 30 mhz, for amateur radio use, to compare it with a similar circuit adapted around plastic case transistors with a 13.8 v power supply, both with variable bias capability, to improve home base station performances, where it is easily possible to get other than 13.8 v power supply for tx finals.
this mosfet unit operates at 28 v and the high bias current used requires a large heat sink and air blower (fan) always on while in tx to mantain these plastic devices well below their maximum power dissipation and temperature limits inside a soa safe operating area point of work. we used low cost mosfets devices that ended to show us good rf performances, but you could also change the project to try specifically rated rf mosfets, of course with some minor mods if eventually required, for even lower imd performances, with more rugged ceramic case like the mrf series, but at much higher prices, already seen in some high level commercial amateur radio transceivers (1). in general linearity at rf is seen as a) uniform gain - frequency relation;   b) low intermodulation imd as monitored with a two tone test (at a small frequency separation around 1 to 2 khz or if not otherwise possible at a larger separation) with a well regulated power supply for the unit. this is of course an approximate "best case" ssb performance test any way since in ssb voice is a whole band of audio frequencies not only two (agree with w8ji tom advices, see topband reflector); c) attenuation of harmonic frequencies (the higher level is in the odd multiple of fundamental output frequency but the closer one is the second and it must be adequately filtered with output low pass filters to get values below - 40 db down as per fcc or other national laws. of course in b) and c) the higher the attenuation the better is (db with minus sign).
we and other amateurs (3) wanted to test these low cost fast switching mosfets that you can find very easily.
some advantages that mosfets have over transistors (4): higher gate impedence to dc make easier to implement a bias circuit without dc current power transistors in the bias circuit and mosfets behaves better, at raising temperature of work, with a self protection action because there is a lowering in the drain-source current; an higher output impedence together with an higher dc power supply make easier to project and built the output rf transformer; the irf510 is easy to get and inexpensive (5). in the negative side mosfets are sensitive to electrostatic discharges and it is commonly guessed that they could self-oscillate (more than transistors) but in all tests we have performed around this circuit and our pcb layout it did not happen.
of course with a 28 v power supply it is not intended for portable operation.   we think that the worst of the previously negative aspects is a lower efficiency: to get a better linearity (lower imd) we need to set the point of work near class a so we have higher quiescent currents while in tx .   the high (stable) gain achieved with 2 stages (2x irf510 + 2x irf510) with a lower higher imd order performances (that means lower splatters if you drive another linear amplifier to get an higher output level) and these devices are so easy to get and low priced that it is interesting to give them a try
本主题包含附件,请 登录 后查看, 或者 注册 成为会员
离线朱霸杰
发帖
149
只看该作者 32楼 发表于: 2005-11-06
用户被禁言,该主题自动屏蔽!
离线范工
发帖
168
只看该作者 33楼 发表于: 2005-11-06
用户被禁言,该主题自动屏蔽!
离线BA0BZ
发帖
2318
只看该作者 34楼 发表于: 2005-11-06
7kw描述的测试方法适合于测试transmitter,并不适合测试纯amplifier。
arrl的高纯度低imd功率测试信号是这样获得的:

test description: investigating the sidebands from a modulated transmitter requires a narrow-band spectrum analysis. in this test,
a two-tone test signal is fed into the amplifier. the display shows the two test tones plus some of the imd products produced by the
ssb transmitter. in the arrl lab, we use a high-power, hybrid combiner made from coaxial cable. this hybrid combiner
combines two 100-watt 14.2 mhz signals, with 3 db of loss, to produce a two-tone test signal of 200 w pep.



'
一般使用6db参考值测试方法:(针对短波电台功放的测试)
使用频谱仪测量满cw功率输出时为参考电平(如100瓦电台在通过100瓦衰减器(如50db))为0dbm.
输入双音信号到电台,ssb模式,发射,在频谱仪观测两个信号电平,调节双关旋钮(如mic gain,pwr)使两个信号的电平为-6dbm,这是他们两边的imd产物与-6dbm的幅度差就是3阶互调,一般在20-40db左右,再往两边过去的就是5阶互调,看图:
与一般的双极发射管和线形专用发射管(如mrf150)相比,irf510的特性就差得多,可参看相关连接的介绍,在20瓦输出时,最差的情况已经只有20db了,如果输出40瓦,后果不堪设想,但看一下1000mp mark v的输出,200瓦时超过30db,75w class a时3x db,
所以厂家不会使用irf510类的管子来做线性功放,虽然它们很便宜,一个mrf150管子国内i报价400元,一个irf510才几元,差别太大了。
但是作为一种研究或者qrp应用,irf510还是可行的,它在10瓦时出时还是有不错的表现的。但如果用到20瓦以上,就似乎不太合适了。
相关连接:http://www.qsl.net/ik4auy/article_4.htm
网页里面有yaesu等成品机的imd特性图链接,好好理解一下原文吧!!里面有很好的解说!! [表情]
hf qrp linear amplifier with low cost mosfets (here is a brief translation)
our main goal was to get an optimized low cost mosfets linear amplifier circuit for qrp, with around 10 - 15 watts pep or cw average power for ssb and cw, with lower higher order imd in the 1.8 to 30 mhz, for amateur radio use, to compare it with a similar circuit adapted around plastic case transistors with a 13.8 v power supply, both with variable bias capability, to improve home base station performances, where it is easily possible to get other than 13.8 v power supply for tx finals.
this mosfet unit operates at 28 v and the high bias current used requires a large heat sink and air blower (fan) always on while in tx to mantain these plastic devices well below their maximum power dissipation and temperature limits inside a soa safe operating area point of work. we used low cost mosfets devices that ended to show us good rf performances, but you could also change the project to try specifically rated rf mosfets, of course with some minor mods if eventually required, for even lower imd performances, with more rugged ceramic case like the mrf series, but at much higher prices, already seen in some high level commercial amateur radio transceivers (1). in general linearity at rf is seen as a) uniform gain - frequency relation;   b) low intermodulation imd as monitored with a two tone test (at a small frequency separation around 1 to 2 khz or if not otherwise possible at a larger separation) with a well regulated power supply for the unit. this is of course an approximate "best case" ssb performance test any way since in ssb voice is a whole band of audio frequencies not only two (agree with w8ji tom advices, see topband reflector); c) attenuation of harmonic frequencies (the higher level is in the odd multiple of fundamental output frequency but the closer one is the second and it must be adequately filtered with output low pass filters to get values below - 40 db down as per fcc or other national laws. of course in b) and c) the higher the attenuation the better is (db with minus sign).
we and other amateurs (3) wanted to test these low cost fast switching mosfets that you can find very easily.
some advantages that mosfets have over transistors (4): higher gate impedence to dc make easier to implement a bias circuit without dc current power transistors in the bias circuit and mosfets behaves better, at raising temperature of work, with a self protection action because there is a lowering in the drain-source current; an higher output impedence together with an higher dc power supply make easier to project and built the output rf transformer; the irf510 is easy to get and inexpensive (5). in the negative side mosfets are sensitive to electrostatic discharges and it is commonly guessed that they could self-oscillate (more than transistors) but in all tests we have performed around this circuit and our pcb layout it did not happen.
of course with a 28 v power supply it is not intended for portable operation.   we think that the worst of the previously negative aspects is a lower efficiency: to get a better linearity (lower imd) we need to set the point of work near class a so we have higher quiescent currents while in tx .   the high (stable) gain achieved with 2 stages (2x irf510 + 2x irf510) with a lower higher imd order performances (that means lower splatters if you drive another linear amplifier to get an higher output level) and these devices are so easy to get and low priced that it is interesting to give them a try
'
离线BA0BZ
发帖
2318
只看该作者 35楼 发表于: 2005-11-06
典型HF纯AMP 三阶IMD指标(使用专用线性放大管)
双极型晶体管13.8v电源 -26db
双极型晶体管48v电源   -30db
mos fet   48v电源   -32db
四极真空管ab1类,三极真空管ab2类 -35~-36db

mos fet sepp输出电路,代表产品为kenwood tl933、jrc 3000f,-40db
离线范工
发帖
168
只看该作者 36楼 发表于: 2005-11-06
用户被禁言,该主题自动屏蔽!
离线范工
发帖
168
只看该作者 37楼 发表于: 2005-11-06
用户被禁言,该主题自动屏蔽!
离线BA0BZ
发帖
2318
只看该作者 38楼 发表于: 2005-11-06
ARRL测试电路
[quote=范工]就是了。测试功放看来还偷不得懒,还得老老实实的去弄两个功率源,看来用一个双音测不了功放本身的imd,没法算。0bz老兄能否贴个arrl的combiner的资料?[/quote]

这个3db hybrid combiner其实和普通的pa里的combiner没有什么区别,两路等幅、同频率、同相的信号输入则输出功率为两路之和,平衡电阻没有损耗,两路等幅、频率相差1khz的测试信号输入,则混合后的等幅双频功率测试信号平均分配到输出端和平衡电阻上。
由于输入的两路单频功率信号在带内可以近似理想化为点频率信号,combiner里面没有非线性元件(严格来说带磁心的传输线变压器还是非理想线性的元件),输出的信号可以近似理想化认为是无imd失真的基准测试信号。
本主题包含附件,请 登录 后查看, 或者 注册 成为会员
离线BA0BZ
发帖
2318
只看该作者 39楼 发表于: 2005-11-06
TRX测试框图
dut trx和dut amp后面的劳什子基本差不多。

hp8563e已经是很老的型号的,印象中底噪是-143dbc/hz,玩耍过同门兄弟8563a,2000年的时候的官方价格可以买到现在的3台ft dx9000d
本主题包含附件,请 登录 后查看, 或者 注册 成为会员